Si531差分晶振|6G无线网络晶振|531FC156M250DG|Silicon低电流振荡器，尺寸7.00x5.00mm，频率156.25MHZ，输出逻辑LVDS，电压2.5V，频率稳定性7ppm，脚位6-SMD，XO时钟振荡器（标准），LVDS输出晶振，LVDS差分晶体振荡器，石英晶体振荡器，有源晶振，进口有源晶振，欧美进口晶振，7050mm有源振荡器，六脚贴片差分晶振，6G无线网络差分晶振，低电压差分晶振，低功耗差分晶振，低相位差分晶振，高性能差分晶振，视频专用晶振，产品很适合用于超声波/SDH，网络，SD/HD视频，测试和测量，时钟和数据恢复，FPGA/ASIC时钟生成等领域.
Si530/531 XO有源晶振采用Skyworks Solutions的先进DSPLL®电路以提供高频下的低抖动时钟。Si530/531可用具有从10到945MHz的任意速率输出频率，并选择频率1400兆赫。与传统XO不同，在传统XO中每个输出频率，Si530/531使用一个固定晶体来提供宽范围的输出频率。这种基于IC的方法允许晶体谐振器，提供卓越的频率稳定性和可靠性。Si531差分晶振|6G无线网络晶振|531FC156M250DG|Silicon低电流振荡器.
Si531差分晶振|6G无线网络晶振|531FC156M250DG|Silicon低电流振荡器 参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | ||||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | ºC | |||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Nominal Frequency1,2 | fO | LVPECL/LVDS/CML | 10 | — | 945 | MHz | ||||||||||||||||||
| CMOS | 10 | — | 160 | MHz | ||||||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||||
| Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | ||||||||||||||||||||
| Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Total Stability | Temp stability = ±7 ppm | — | — | ±20 | ppm | |||||||||||||||||||
| Temp stability = ±20 ppm | — | — | ±31.5 | ppm | ||||||||||||||||||||
| Temp stability = ±50 ppm | ±61.5 | ppm | ||||||||||||||||||||||
| Powerup Time4 | tOSC | 10 | ms | |||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| LVPECL Output Option1 | VO | mid-level | VDD– 1.42 | — | VDD– 1.25 | V | ||||||||||||||||||
| VOD | swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||||
| VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||||
| LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||||
| VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||||
| CML Output Option2 | VO | 2.5/3.3 V option mid-level | VDD– 1.30 | V | ||||||||||||||||||||
| 1.8 V option mid-level | VDD– 0.36 | V | ||||||||||||||||||||||
| VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | |||||||||||||||||||
| 1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | ||||||||||||||||||||
| CMOS Output Option3 | VOH | IOH= 32 mA | 0.8 x VDD | VDD | V | |||||||||||||||||||
| VOL | IOL= 32 mA | 0.4 | V | |||||||||||||||||||||
| Rise/Fall time (20/80%) | tR,tF | LVPECL/LVDS/CML | 350 | ps | ||||||||||||||||||||
| CMOS with CL= 15 pF | 1 | ns | ||||||||||||||||||||||
| Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
VDD– 1.3 V 1.25 V (diff) VDD/2 |
45 | 55 | % | ||||||||||||||||||
Si531差分晶振|6G无线网络晶振|531FC156M250DG|Silicon低电流振荡器 尺寸图
OSC晶振产品特征:
可用于任何速率的输出
频率从10兆赫到945兆赫
并选择1.4 GHz的频率
集成superior的第三代DSPLL
抖动性能 频率稳定性比高3倍
基于SAW的振荡器
内部固定晶振频率
确保高可靠性和低老化
可用的CMOS、LVPECL、 LVDS和CML输出
3.3、2.5和1.8 V电源选项
行业标准5 x 7毫米
封装和引脚排列
无铅/符合RoHS标准
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