美国Silicon晶振Si510/Si511 XO采用Skyworks Solutions的先进DSPLL技术，提供从100kHz到250MHz的任何频率。与传统的XO不同，其中每个输出频率需要不同的晶体，Si510/Si511差分晶体振荡器，使用一个固定晶体和Skyworks Solutions的专有DSPLL，合成器，以生成该范围内的任何频率。此IC基于，该方法允许晶体谐振器提供增强的可靠性，改进的机械坚固性和优异的稳定性。此外，该解决方案提供卓越的电源噪声抑制，简化了低抖动时钟，在嘈杂的环境中生成。晶体ESR和DLD分别为，经过生产测试，以保证性能并提高可靠性。贴片晶振Si510/511在工厂可配置用于各种各样的用户规范，包括频率、电源电压、输出格式、输出使能极性，以及稳定性。具体配置在，装运，消除了长交付周期和非经常性工程费用，与自定义频率振荡器关联。差分晶振510ABA125M000BAG提供卓越的电源噪声抑制
差分晶振510ABA125M000BAG提供卓越的电源噪声抑制
原厂代码
晶振厂家
型号
频率
电压
频率稳定度
包装/封装
510BBA156M250BAGR
Silicon晶振
Si510
156.25MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA125M000BAG
Silicon晶振
Si510
125MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA200M000BAG
Silicon晶振
Si510
200MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA125M000BAG
Silicon晶振
Si510
125MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA156M250BAG
Silicon晶振
Si510
156.25MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA200M000BAG
Silicon晶振
Si510
200MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA200M000BAG
Silicon晶振
Si510
200MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA156M250AAG
Silicon晶振
Si510
156.25MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA156M250AAG
Silicon晶振
Si510
156.25MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA125M000BAG
Silicon晶振
Si510
125MHz
2.5V
±25ppm
6-SMD, No Lead
510FBA100M000BAG
Silicon晶振
Si510
100MHz
2.5V
±25ppm
6-SMD, No Lead
510BBA106M250BAG
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA100M000AAG
Silicon晶振
Si510
100MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA125M000AAG
Silicon晶振
Si510
125MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA148M500BAG
Silicon晶振
Si510
148.5MHz
2.5V
±25ppm
6-SMD, No Lead
510BBA148M500BAG
Silicon晶振
Si510
148.5MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA156M250AAG
贴片晶振
Si510
156.25MHz
2.5V
±25ppm
6-SMD, No Lead
510FBA148M500AAG
Silicon晶振
Si510
148.5MHz
2.5V
±25ppm
6-SMD, No Lead
510BBA148M500AAG
Silicon晶振
Si510
148.5MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA148M500AAG
Silicon晶振
Si510
148.5MHz
3.3V
±25ppm
6-SMD, No Lead
510DBA100M000AAG
Silicon晶振
Si510
100MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA000149BAG
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA000149BAG
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA106M250BAG
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA000149BAG
Silicon晶振
Si510
74.175824MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA74M2500BAG
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA000149AAG
Silicon晶振
Si510
74.175824MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA125M000AAG
Silicon晶振
Si510
125MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA106M250AAG
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA74M2500AAG
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
6-SMD, No Lead
特征：支持来自的任何频率100千赫至250兆赫，低抖动操作，2到4周的交付周期，完全稳定性包括10年老化，综合生产测试 覆盖范围包括晶体ESR和 DLD，用于电源的片上LDO调节器 电源噪声滤波，3.3、2.5或1.8V工作电压，差分(LVPECL，LVDS， HCSL)或CMOS输出选项，可选集成1:2 CMOS 扇出缓冲器，OE上的残帧抑制和 通电，行业标准7.0x5.0mm，5.0x3.2mm，和3.2x2.5mm封装有源晶振，无铅，符合RoHS标准，–40至85摄氏度工作温度。
应用于：SONET/SDH/OTN，千兆以太网，光纤通道/SAS/SATA，PCI Express，3G-SDI/HD-SDI/SDI，电信,交换机/路由器，FPGA/ASIC时钟生成
510BBA000149AAG
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA000149AAG
Silicon晶振
Si510
74.175824MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA74M2500AAG
Silicon晶振
Si510
74.25MHz
2.5V
±25ppm
6-SMD, No Lead
510BBA106M250AAG
Silicon晶振
Si510
106.25MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA74M2500AAG
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA106M250AAG
Silicon晶振
Si510
106.25MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA155M520BAG
Silicon晶振
Si510
155.52MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA155M520BAG
Silicon晶振
Si510
155.52MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA000110BAG
Silicon晶振
Si510
148.35165MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA000110BAG
Silicon晶振
Si510
148.35165MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA000110BAG
Silicon晶振
Si510
148.35165MHz
2.5V
±25ppm
6-SMD, No Lead
510BBA155M520BAG
Silicon晶振
Si510
155.52MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA155M520AAG
Silicon晶振
Si510
155.52MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA000110AAG
石英贴片晶振
Si510
148.35165MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA000110AAG
Silicon晶振
Si510
148.35165MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA155M520AAG
Silicon晶振
Si510
155.52MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA212M500BAG
Silicon晶振
Si510
212.5MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA212M500BAG
Silicon晶振
Si510
212.5MHz
3.3V
±25ppm
6-SMD, No Lead
510ABA212M500AAG
Silicon晶振
Si510
212.5MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA212M500AAG
Silicon晶振
Si510
212.5MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA212M500AAG
Silicon晶振
Si510
212.5MHz
2.5V
±25ppm
6-SMD, No Lead
510FBA200M000AAG
Silicon晶振
Si510
200MHz
2.5V
±25ppm
6-SMD, No Lead
510EBA125M000AAG
Silicon晶振
Si510
125MHz
2.5V
±25ppm
6-SMD, No Lead
510ACA47M2500AAG
Silicon晶振
Si510
47.25MHz
3.3V
±20ppm
6-SMD, No Lead
510BCA148M500BAG
Silicon晶振
Si510
148.5MHz
3.3V
±20ppm
6-SMD, No Lead
510BBA74M2500BAG
Silicon晶振
Si510
74.25MHz
3.3V
±25ppm
6-SMD, No Lead
510BBA100M000BAG
Silicon晶振
Si510
100MHz
3.3V
±25ppm
6-SMD, No Lead
510FBA125M000AAG
Silicon晶振
Si510
125MHz
2.5V
±25ppm
6-SMD, No Lead
510ABA100M000AAG
Silicon晶振
Si510
100MHz
3.3V
±25ppm
6-SMD, No Lead
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