美国Silicon晶振型号Si501 CMEMS振荡器系列为传统的晶体振荡器提供了单片的、基于mems的IC替代品。硅实验室的CMEMS技术将标准CMOS+MEMS结合在一个单片IC集成电路中，提供集成、高质量和高可靠性的晶体振荡器。每个设备都经过工厂测试和配置，以保证其在电压、工艺、温度、冲击、振动和老化等方面的性能。石英贴片晶振应用于：存储（SATA/SAS/PCIe），通用处理器，工业控制器，嵌入式控制器，电机控制，流量控制，办公/家庭自动化，IP摄像头/监视，显示和控制面板，户外电子产品，多功能打印机，办公设备等应用。CMEMS振荡器501JCA100M000BAG/100MHz/3.3V/LVCMOS/±20ppm/SMD
| 原厂代码 | 进口晶振 | 型号 | 频率 | 电压 | 频率稳定度 | 包装/封装 |
| 501AAA27M0000DAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501AAA27M0000DAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501JCA100M000CAG | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501JCA100M000BAG | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501HCAM032768BAF | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501BCAM032768DAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501JCAM032768DAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501JAA24M0000DAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501BAA16M0000DAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501JAA24M0000CAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501AAA27M0000CAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501AAA25M0000BAF | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501JAA40M0000CAF | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501AAA24M0000BAF | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501EAA48M0000CAF | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501AAA27M0000BAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501EAA48M0000BAF | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501JAA25M0000BAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501BAA50M0000BAF | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501AAA50M0000CAF | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501EAA48M0000DAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501AAA25M0000DAG | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501HCA27M0000DAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501ABA8M00000BAF | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm | 4-SMD, No Lead |
| 501HCA12M0000DAF | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501JCA24M0000DAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501AAA24M0000BAG | 有源晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501BCA16M0000BAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501JCA24M0000CAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501HCA26M0000BAF | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501JAA25M0000BAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501BCA16M0000CAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501EAA48M0000CAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501BAA16M0000BAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501BAA16M0000CAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501JAA24M0000BAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501AAA27M0000BAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501ACA10M0000CAF | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501JAA40M0000BAG | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm | 4-SMD, No Lead |
| 501ACA10M0000BAF | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501JCA10M0000BAF | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501HCA12M0000BAF | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501JCA25M0000CAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501HCA27M0000BAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501AAA50M0000BAG | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm | 4-SMD, No Lead |
| 501ABA8M00000BAG | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm | 4-SMD, No Lead |
| 501HCA27M0000DAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501ABA8M00000CAG | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm | 4-SMD, No Lead |
| 501JCA10M0000BAG | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
| 501ACA10M0000BAG | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm | 4-SMD, No Lead |
| 501JCA20M0000CAG | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm | 4-SMD, No Lead |
Si501晶振特征：
宽频率范围：32kHz到100MHz贴片晶振，接触硅实验室频率超过100MHz，
Si501单频w/OE，Si502双频w/OE/FS，Si503四频w/FS，
±20/30/50ppm频率稳定包括10年老化，
支持LVCMOS输出，低周期抖动，低功率，石英晶体振荡器
连续供电电压范围：+1.71V到+3.63V，
用户可选择上升/下降选项，无故障启动和停止，
优秀的短期稳定性，长期老化良好，
行业标准尺寸：2x2.5mm，2.5x3.2mm，3.2x5mm封装，
符合RoHS，无铅，
短交货时间：<2周，外部商业：-20+70°C，工业版：-40℃+85℃。
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